Modulation of the Inner Gate Length in MFMIS NSFETs To Achieve Big Gains in Memory Window (Samsung, Seoul National Univ.)


A new technical paper titled "Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes" was published by researchers at Samsung and Seoul National University. Abstract "This work proposes a new way of lowering the area ratio (AR) between the ferroelectric and metal-oxide-semiconductor (MOS) regions of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ... » read more

Design Optimization Techniques To Improve NC-CFET Performance


A new technical paper titled "Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This work assesses and analyzes negative-capacitance CFETs (NC-CFETs) with metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) configu... » read more