Non-Destructive Metrology Techniques For Measuring Hole Profile In DRAM Storage Node


DRAM storage node profile measurement during high aspect ratio (HAR) etch has been one of the most challenging metrology steps. DRAM storage node profile affects refresh time and device electric quality. So, controlling this profile is one of the key challenges. Conventional 3D modeling in Optical Critical Dimension (OCD) metrology has typically used multiple cylinder stacks. This method cannot... » read more