A new technical paper titled "Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes" was published by researchers at Samsung and Seoul National University.
Abstract
"This work proposes a new way of lowering the area ratio (AR) between the ferroelectric and metal-oxide-semiconductor (MOS) regions of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ...
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