A technical paper titled "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics" was published by researchers at King Abdullah University of Science and Technology (KAUST) and Indian Institute of Technology.
Abstract:
"This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film...
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