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Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node


New research paper from University of Saskatchewan, with funding by NSERC and the Cisco University Research Program. Abstract "Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should be explor... » read more