CMOS-Compatible Approach to Extending the Spectral Response of Oxide Semiconductors


A new technical paper titled "Sputtering-driven formation of interstitial oxygen for intrinsic NIR detection in IGZO phototransistor" was published by researchers at KICET, Korea University, Yonsei University, and Argonne National Lab. Abstract "Amorphous indium gallium zinc oxide (a-IGZO) is a promising wide-bandgap semiconductor for large-area optoelectronics; however, its intrinsic ins... » read more

Oxides Bring Low Leakage Transistors To Leading-Edge Memories


AI workloads need to position more memory that uses less power in ever-closer proximity to computational logic. That overriding imperative is driving new memory designs and new materials exploration across a wide range of applications, including cache memory, working memory, as well as a new category, non-volatile memory used for direct computation. The largest of these, by volume, is workin... » read more

Stacking Persistent Embedded Memories Based On Oxide Transistors Upon GPGPU Platforms (Georgia Tech)


A new technical paper titled "CMOS+X: Stacking Persistent Embedded Memories based on Oxide Transistors upon GPGPU Platforms" was published by Georgia Tech. Abstract "In contemporary general-purpose graphics processing units (GPGPUs), the continued increase in raw arithmetic throughput is constrained by the capabilities of the register file (single-cycle) and last-level cache (high bandwidth... » read more

Research Bits: April 16


Tunable thermal conductivity in memristors Researchers from the Center for Research in Biological Chemistry and Molecular Materials (CiQUS) and Forschungszentrum Juelich discovered that oxide-based memristive devices can demonstrate tunable thermal conductivity. Alongside the memristor's electrical resistive switching, a thermal resistive switching effect also occurs at the metal-oxide inte... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors


A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

Research Bits: June 13


Converting heat to electricity Researchers at the National Institute of Standards and Technology (NIST) and University of Colorado Boulder fabricated a device to boost the conversion of heat into electricity. The technique involves depositing hundreds of thousands of microscopic columns of gallium nitride atop a silicon wafer. Layers of silicon are then removed from the underside of the waf... » read more