Doping-Dependent Charge Trapping in WS2 FETs (KU Leuven, imec, TU Wien)


A new technical paper titled "Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs" was published by researchers at KU Leuven, imec and TU Wien. Abstract "We report doping-dependent charge trapping in WS2 field-effect transistors fabricated on a 300 mm wafer. In particular, higher n-type doping–associated with smaller channel areas–correlat... » read more