Performance Enhancement Of An Si Photodetector By Incorporating Photon-Trapping Surface Structures


A technical paper titled “Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures” was published by researchers at University of California Davis, W&WSens Devices Inc., and University of California Santa Cruz. Abstract: "The photosensitivity of silicon is inherently very low in the vis... » read more