Identifying Read Disturbance Threshold of DRAM Chips (ETH Zurich, Rutgers)


A new technical paper, "DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM Chips," was published by ETH Zurich and Rutgers University. Abstract "State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturba... » read more

Temporal Variation in DRAM Read Disturbance in DDR4 and HBM2 (ETH Zurich, Rutgers)


A new technical paper titled "Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance" was published by researchers at ETH Zurich and Rutgers University. Abstract "Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold... » read more