A new technical paper titled "On-Current Degradation in Ultra-Scaled Nanosheet FETs with S/D Underlap Doping" was published by researchers at Global TCAD Solutions GmbH and TU Wien.
Abstract:
"Aggressive gate pitch scaling makes it increasingly challenging to control the doping gradient at the source/drain (S/D) extensions. To address this, S/D underlap doping has been proposed as a solutio...
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