ANN Framework for Thermal-Aware Modeling of GAAFETs (NYCU)


A new technical paper, "A Device-Physics-Informed Artificial Neural Network Approach for Thermal-Aware I-V and C-V Modeling of GAA FETs," was published by researchers at National Yang Ming Chiao Tung University. Abstract "This work introduces a device-physics-informed neural network framework for simultaneous modeling of thermal-aware I-V and C-V characteristics of gate-all-around (GAA) f... » read more