A new technical paper, "A Device-Physics-Informed Artificial Neural Network Approach for Thermal-Aware I-V and C-V Modeling of GAA FETs," was published by researchers at National Yang Ming Chiao Tung University.
Abstract
"This work introduces a device-physics-informed neural network framework for simultaneous modeling of thermal-aware I-V and C-V characteristics of gate-all-around (GAA) f...
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