On-Current Performance of Ultra-Scaled NSFETs With Source/Drain Underlap Doping (Global TCAD Solutions, TU Wien)


A new technical paper titled "On-Current Degradation in Ultra-Scaled Nanosheet FETs with S/D Underlap Doping" was published by researchers at Global TCAD Solutions GmbH and TU Wien. Abstract: "Aggressive gate pitch scaling makes it increasingly challenging to control the doping gradient at the source/drain (S/D) extensions. To address this, S/D underlap doping has been proposed as a solutio... » read more