tag: ruthenium

Backside Power Delivery Gears Up For 2nm Devices
By Laura Peters - 26 Feb, 2024 - Comments: 1

The top three foundries plan to implement backside power delivery as soon as the 2nm node, setting the stage for faster and more efficient switching in chips, reduced routing congestion, and lower noise across multiple metal layers. The benefits of using this approach are significant. By delivering power using slightly fatter, less resistive lines on the backside, rather than inefficient fro... » read more

Analysis Of BEOL Metal Schemes By Process Modeling
By Daebin Yim - 16 Nov, 2023 - Comments: 0

The semiconductor industry has been diligently searching for alternative metal line materials to replace the conventional copper dual damascene scheme, because as interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. The barrier layer's dimensions cannot be scaled down as quickly as the metal line width (figure 1). Popular barrier materials su... » read more

Etch Processes Push Toward Higher Selectivity, Cost Control
By Laura Peters - 18 May, 2023 - Comments: 0

Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory cells, engineers continue to deliver reliable etch processes. “To sustainably create chips... » read more

Big Changes Ahead In Power Delivery, Materials, And Interconnects
By Laura Peters - 22 Mar, 2023 - Comments: 0

Part one of this forecast looked at evolving transistor architectures and lithography platforms. This report examines revolutions in interconnects and packaging. When it comes to device interconnects, it’s hard to beat copper. Its low resistivity and high reliability have served the industry exceedingly well as both on-chip interconnect and wires between chips. But in logic chips, with int... » read more

How Far Will Copper Interconnects Scale?
By Laura Peters - 15 Dec, 2022 - Comments: 0

As leading chipmakers continue to scale finFETs — and soon nanosheet transistors — to ever-tighter pitches, the smallest metal lines eventually will become untenable using copper with its liner and barrier metals. What comes next, and when, is still to be determined. There are multiple options being explored, each with its own set of tradeoffs. Ever since IBM introduced the industry to c... » read more

Challenges In Backside Power Delivery
By Laura Peters - 17 Nov, 2022 - Comments: 0

One of the key technologies to enable scaling below 3nm involves delivering of power on the backside of a chip. This novel approach enhances signal integrity and reduces routing congestion, but it also creates some new challenges for which today there are no simple solutions. Backside power delivery (BPD) eliminates the need to share interconnect resources between signal and power lines on t... » read more

How To Compare Chips
By Ed Sperling - 15 Sep, 2022 - Comments: 0

Traditional metrics for semiconductors are becoming much less meaningful in the most advanced designs. The number of transistors packed into a square centimeter only matters if they can be utilized, and performance per watt is irrelevant if sufficient power cannot be delivered to all of the transistors. The consensus across the chip industry is that the cost per transistor is rising at each ... » read more

Extending Copper Interconnects To 2nm
By Laura Peters - 17 Mar, 2022 - Comments: 0

Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Photomask Challenges At 3nm And Beyond
By Mark LaPedus - 25 Jan, 2022 - Comments: 1

Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

What’s Next For Transistors And Chiplets
By Mark LaPedus - 21 Oct, 2021 - Comments: 5

Sri Samavedam, senior vice president of CMOS Technologies at Imec, sat down with Semiconductor Engineering to talk about finFET scaling, gate-all-around transistors, interconnects, packaging, chiplets and 3D SoCs. What follows are excerpts of that discussion. SE: The semiconductor technology roadmap is moving in several different directions. We have traditional logic scaling, but packaging i... » read more

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