category: Research

category: Auto, Security & Edge AI

Manufacturing Bits: Jan. 21
By Mark LaPedus - 21 Jan, 2020 - Comments: 0

New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Power/Performance Bits: Jan. 21
By Jesse Allen - 21 Jan, 2020 - Comments: 0

Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Manufacturing Bits: Jan. 13
By Mark LaPedus - 13 Jan, 2020 - Comments: 0

Plastic gold ETH Zurich has developed an 18-carat gold nugget based on plastic. Instead of traditional metallic alloy elements, ETH’s gold nugget consists of a matrix of plastic. Weighing five to ten times less than traditional gold, ETH’s plastic gold can be used in watches, jewelry, radiation shielding, catalysis and electronics. Gold is a chemical element used in a plethora of app... » read more

Power/Performance Bits: Jan. 13
By Jesse Allen - 13 Jan, 2020 - Comments: 0

Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Manufacturing Bits: Jan. 7
By Mark LaPedus - 07 Jan, 2020 - Comments: 0

Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Power/Performance Bits: Jan. 7
By Jesse Allen - 07 Jan, 2020 - Comments: 0

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Power/Performance Bits: Dec. 31
By Jesse Allen - 31 Dec, 2019 - Comments: 0

Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2019 - Comments: 0

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

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