How To Deal With Electromigration


The replacement of aluminum with copper interconnect wiring, first demonstrated by IBM in 1997, brought the integrated circuit industry substantial improvements in both resistance to electromigration and line conductivity. Copper is both a better and more stable conductor than aluminum. Difficult though the transition was, it helped extend device scaling for another eighteen years (and counting... » read more

3D NAND Market Heats Up


After some delays and uncertainty in past years, the 3D NAND market is finally heating up. In 2013 and 2014, Samsung was the only vendor participating in the 3D NAND market. Most other suppliers were supposed to ship 3D NAND devices in volumes last year, but vendors pushed out their production dates for various business and technical reasons. Going into 2015, [getentity id="22865" e_nam... » read more

Has 3D NAND Fallen Flat?


Today’s planar NAND technology will hit the wall at 10nm, prompting the need for the next big thing in flash memory—3D NAND. In fact, 3D NAND may extend NAND flash memory for the next several years and enable new applications. And it will also drive a new wave of fabs and tool orders. But the transition won’t be as smooth as previous rollouts. 3D NAND is harder to manufacture than pr... » read more

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