Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)


A new technical paper titled "Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx Nanoparticle Contact Doping" was published by researchers at National Yang Ming Chiao Tung University and National Center for Instrumentation Research. "Carbon nanotubes (CNTs) are promising candidates for next-generation back-end-of-line (BEOL) compatible devices due t... » read more

A Node Too Far?


Physics is an unforgiving master. While the semiconductor industry has been actively developing new transistor structures, new materials for interconnects and lining trenches, and new approaches to alleviate congestion at the lowest metal levels, it also has been playing an accelerating game of Whac-a-Mole. Whenever a problem pops up, the solution to that problem is never complete and more prob... » read more

What Comes After FinFETs?


By Mark LaPedus The semiconductor industry is currently making a major transition from conventional planar transistors to finFETs starting at 22nm. The question is what’s next? In the lab, IBM, Intel and others have demonstrated the ability to scale finFETs down to 5nm or so. If or when finFETs runs out of steam, there are no less than 18 different next-generation candidates that could o... » read more