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Measurement Of Deep Trenches To Study The RIE Lag Effect


The demand for accurate characterization of high aspect ratio geometries such as narrow gaps, deep trenches or deep holes arises in many technologies and industries. A variety of metrology techniques have been utilized to accommodate these needs. Among the candidates for this type of metrology, 3D optical profiling characterization is becoming more and more prevalent in process control. Due to ... » read more

Super Planarizing Material For Trench And Via Arrays


As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more