Researchers at Korea Institute of Science and Technology (KIST) published "Beyond ZrO2: Rutile TiO2 as the Dielectric Platform for Next-Generation DRAM Capacitors."
Abstract
"As DRAM technology nodes move into the sub-10 nm regime, capacitor scaling is increasingly constrained by both footprint loss and a hard physical thickness limit for the entire electrode–dielectric–electrode stac...
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