中文 English

Metrology Challenges For Gate-All-Around


Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

Beam Me Up


By Mark LaPedus For years, electron-beam tools have been struggling to keep up with photomask complexity, causing an alarming increase in write times and mask production costs. Intel and others recently warned that e-beams soon could reach their fundamental limits, thereby requiring the need for new solutions. And in the multiple patterning era, mask makers could see their capital costs soa... » read more