Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides

New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more