Week In Review: Design, Low Power


Memory CEA-Leti demonstrated 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node. It utilizes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small as 0.16 µm² and solder reflow compatibility for the first time for this type of memory. The researchers anticipate it will be useful for embedded applications such at IoT and wearable dev... » read more

Week In Review: Manufacturing, Test


Trade and government The U.S. continues to tighten its export controls for hi-tech, including a move to restrict fab technologies that enable 5nm chip production. The U.S. Department of Commerce has imposed controls on six more technologies, bringing the total to 37. They include: hybrid additive manufacturing/computer controlled tools; computational lithography software designed for EUV masks... » read more