3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia)


Researchers from San Jose State University and Sandia National Laboratories published a technical paper titled “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” Abstract Excerpt: “In addition to the traditional bottom dielectric isolation (BDI), which isolates the source/drain (S/D) from the substrate (dubbed SD-BDI),... » read more

Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC)


Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have published “Scaling nanoribbon transistors with monolayer transition metal dichalcogenides”. Abstract “Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS... » read more

3D Atomic-Scale Metrology of Strain Relaxation And Roughness in GAAFETs Via Electron Ptychography (Cornell, ASM, TSMC)


A new technical paper, "3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography," was published by researchers at Cornell University, ASM and TSMC. Abstract "Next-generation semiconductor devices are adopting three-dimensional (3D) architectures with feature sizes in the few-nanometer regime, creating a need for atomic-scale me... » read more