ALD for Ru wiring
Researchers from Ulsan National Institute of Science and Technology (UNIST), Hongik University, and Tanaka Precious Metal Technologies developed an atomic layer deposition (ALD) process for creating chip interconnects using a ruthenium (Ru) precursor with a thermal stability up to 400 °C. The high-temperature ALD process can produce dense, high-quality Ru films without deg...
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