Noise Margin Enhancing ULVR SRAM Cell (Tokyo Institute of Technology)


A new technical paper titled "A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity" was published by researchers at the Tokyo Institute of Technology. Excerpt "A new ultralow-voltage retention (ULVR) SRAM cell is proposed, which can highly enhance the noise margin (NM) for the ULVR mode at ultralow voltages (VUL). This 8T cell is configured with newtype Schmitt-trigger (ST) i... » read more

Demonstrating A 2D–0D Hybrid Optical Multi-Level Memory Device Operated By Laser Pulses


A technical paper titled “Probing Optical Multi-Level Memory Effects in Single Core–Shell Quantum Dots and Application Through 2D-0D Hybrid Inverters” was published by researchers at Korea Institute of Science and Technology (KIST), Korea University, Daegu Gyeongbuk Institute of Science and Technology (DGIST), National Institute for Materials Science (Japan), and University of Science and... » read more