Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

By Technical Paper Link - 19 Sep, 2023 - Comments: 0

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Gem5 Simulation Environment With Customized RISC-V Instructions for LIM Architectures

By Technical Paper Link - 09 Apr, 2023 - Comments: 0

A new technical paper titled "Simulation Environment with Customized RISC-V Instructions for Logic-in-Memory Architectures" was published by researchers at National Tsing-Hua University, Politecnico di Torino, University of Rome Tor Vergata, and University of Twente. Abstract "Nowadays, various memory-hungry applications like machine learning algorithms are knocking "the memory wall". Tow... » read more

Framework Based on an RISC-V Microprocessor Supporting LiM Operations

By Technical Paper Link - 29 Sep, 2022 - Comments: 0

A new technical paper titled "RISC-Vlim, a RISC-V Framework for Logic-in-Memory Architectures" was published by researchers at Politecnico di Torino (Italy), Univerity of Tor Vergata (Italy), and University of Twente (The Netherlands). Abstract: "Most modern CPU architectures are based on the von Neumann principle, where memory and processing units are separate entities. Although processin... » read more

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

By Technical Paper Link - 15 Mar, 2022 - Comments: 0

Abstract: "The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindra... » read more

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tag: logic-in-memory

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

Gem5 Simulation Environment With Customized RISC-V Instructions for LIM Architectures

Framework Based on an RISC-V Microprocessor Supporting LiM Operations

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

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tag: logic-in-memory

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

Gem5 Simulation Environment With Customized RISC-V Instructions for LIM Architectures

Framework Based on an RISC-V Microprocessor Supporting LiM Operations

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

Trending Articles

NAND Flash Targets 1,000 Layers

One Chip Vs. Many Chiplets

FOPLP Gains Traction in Advanced Semiconductor Packaging

HBM Options Increase As AI Demand Soars

Asia Government Funding Surges

Knowledge Centers Entities, people and technologies explored

Related Articles

Shift Left Is The Tip Of The Iceberg

Partitioning In The Chiplet Era

NAND Flash Targets 1,000 Layers

3.5D: The Great Compromise

AI’s Role In Chip Design Widens, Drawing In New Startups

What Comes After HBM For Chiplets

Memory Fundamentals For Engineers

New AI Processors Architectures Balance Speed With Efficiency

Sponsors

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