Modulated Electron Microscopy Applied In The Process Monitoring Of Memory Cell And The Defect Inspection Of Floating Circuits


A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA Corporation, and Western Digital. Abstract: "E-beam inspection based on voltage-contrast (VC) defect metrology has been widely utilized for failure mode analysis of memory devices. Variation in e-beam... » read more