A new technical paper titled "Sputtering-driven formation of interstitial oxygen for intrinsic NIR detection in IGZO phototransistor" was published by researchers at KICET, Korea University, Yonsei University, and Argonne National Lab.
Abstract
"Amorphous indium gallium zinc oxide (a-IGZO) is a promising wide-bandgap semiconductor for large-area optoelectronics; however, its intrinsic ins...
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