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Next-Gen Transistors


Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering about the advantages of using these new transistor types, along with myriad challenges at future nodes, particularly in the area of metrology. » read more

Process Detection & Variability


A Q&A with Moortec CTO Oliver King. What do we mean by process variation? Process variation is a complex subject which covers a range of effects, but broadly we can consider that the effects are caused by imperfections in the manufacturing process. Examples are implant variations, mask misalignments, and optical variations. These all add up to give statistical variation on the ideal o... » read more