A Potentially CMOS Compatible Integration Of Reconfigurable FETs Based On Al-Si-Al Heterostructure Sheets


A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna and Swiss Federal Laboratories for Materials Science and Technology. Abstract: "Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single device, have already sho... » read more

Nanoscale Reconfigurable Si Transistors (TU Wien, CNRS, UNC)


A new technical paper titled "Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi-Wire Channels" was published by researchers at TU Wien, CNRS, and University of North Carolina at Chapel Hill. Abstract: "In this work, bottom-up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top-down fabricated nanosheet (NS) and ... » read more

Cross-Shaped Reconfigurable Transistor (CS-RFET) With Flexible Signal Routing


A new technical paper titled "Cross-Shape Reconfigurable Field Effect Transistor for Flexible Signal Routing" was published by researchers at NaMLab gGmbH, École Centrale de Lyon, and TU Dresden. "A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor charac... » read more

3-to-1 Reconfigurable Analog Signal Modulation Circuit On A Single Device


A new technical paper titled "Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor" was published by researchers at NaMLab gGmbH, GlobalFoundries, and TU Dresden. "Reconfigurable field effect transistors are an emerging class of electronic devices, which exploit a structure with multiple independent gates to selectively adjust the charge carrier ... » read more