Surface-Activated ALD For Room-Temperature Bonding of Al2O3


A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more