A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University.
Abstract
"In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho...
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