Comparative Analysis of CFET and NSFET Architectures (TU Munich, IIT)


A new technical paper titled "Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET" was published by researchers at TU Munich and Indian Institute of Technology. Abstract "This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature ... » read more

Innovations in Device Design of The Gate-All-Around (GAA) Nanosheet FETs (IBM Research)


A technical paper titled "A Review of the Gate-All-Around Nanosheet FET Process Opportunities" was published by researchers at IBM Research Albany. Abstract: "In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel... » read more