Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories


A new technical paper titled "Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data" was published by researchers at UT Austin and Samsung Advanced Institute of Technology (SAIT). Abstract "With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conver... » read more