High-NA EU Lithography: Extending The STCC Formula (Science Tokyo)


A new technical paper, "Source-position-dependent transmission cross coefficient formula including polarization and mask three-dimensional effects in high-numerical-aperture extreme ultraviolet lithography" was published by researchers at Institute of Science Tokyo. This work is based on the paper presented at SPIE Advanced Lithography + Patterning 2026. "The polarization effect is not negli... » read more