MoS2 Memristors With Fast Switching Speed and Low Power Consumption (AMO, RWTH Aachen et al.)


A new technical paper titled "Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications" was published by researchers at AMO GmbH, RWTH Aachen, Forschungszentrum Jülich, Peter Grünberg Institute, Eindhoven University of Technology et al. Abstract "Memristors based on 2D materials have garnered signifi... » read more

Overcoming The vdW Gap Bottleneck in Semiconductor Scaling (TU Wien)


A new technical paper titled "The van der Waals Gap: a Hidden Showstopper in Semiconductor Device Scaling" was published by researchers at TU Wien. Abstract "Continued miniaturization of transistors is critical for sustaining advances in computing performance, energy efficiency, and integration density. A central nanoscale challenge is controlling gate leakage through ultrathin dielectrics.... » read more

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)


A new technical paper titled "Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by ana... » read more