Low Power HW Accelerator for FP16 Matrix Multiplications For Tight Integration Within RISC-V Cores


This new technical paper titled "RedMulE: A Compact FP16 Matrix-Multiplication Accelerator for Adaptive Deep Learning on RISC-V-Based Ultra-Low-Power SoCs" was published by researchers at University of Bologna and ETH Zurich. According to their abstract: "One of the key stumbling stones is the need for parallel floating-point operations, which are considered unaffordable on sub-100 mW extre... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)


New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Ultra-Fast Photonic Computing Using Polarization


New technical paper titled "Polarization-selective reconfigurability in hybridized-active-dielectric nanowires" was recently published by researchers at University of Oxford and University of Exeter.  The paper demonstrates "the ability to use polarization as a parameter to selectively modulate the conductance of individual nanowires within a multi-nanowire system. By using polarization as the... » read more

Fabrication And Characterization Of Junctionless FETs


New technical paper titled "Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions"  was published from researchers at Max Planck Center for Complex Fluid Dynamics, University of Twente, University of Glasgow, and Luxembourg Institute of Science and Technology (LIST). Abstract "Label-free field-effect transistor-based immunosensors are promising candidates for ... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform


New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Analog Deep Learning Processor (MIT)


A team of researchers at MIT are working on hardware for artificial intelligence that offers faster computing with less power. The analog deep learning technique involves sending protons through solids at extremely fast speeds.  “The working mechanism of the device is electrochemical insertion of the smallest ion, the proton, into an insulating oxide to modulate its electronic conductivity... » read more

Monolithic Microfluidic Cooling on a Functional CPU Running Real-World Benchmarks


New technical paper titled "Integrated Silicon Microfluidic Cooling of a High-Power Overclocked CPU for Efficient Thermal Management" is published by researchers at Georgia Tech and Microsoft. According to the abstract: "In this work, we use micropin-fins etched directly on the back of an Intel Core i7-8700K CPU and overclocked it to dissipate up to 215W of power while being cooled by room... » read more

Identifying PCB Defects with a Deep Learning Single-Step Detection Model


This new technical paper titled "End-to-end deep learning framework for printed circuit board manufacturing defect classification" is from researchers at École de technologie supérieure (ÉTS) in Montreal, Quebec. Abstract "We report a complete deep-learning framework using a single-step object detection model in order to quickly and accurately detect and classify the types of manufacturi... » read more

Cubic Boron Arsenide’s Unique Semiconducting Properties (MIT)


New research claims cubic boron arsenide could be a “game-changing” semiconductor with a “very high mobility for both electrons and holes,” according to this MIT article. “Heat is now a major bottleneck for many electronics,” says Shin, the paper’s lead author. “Silicon carbide is replacing silicon for power electronics in major EV industries including Tesla, since it has thr... » read more

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