High Electron Mobility in Strained GaAs Nanowires


Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

Always-On Sub-Microwatt Spiking Neural Network Based on Spike-Driven Clock- and Power-Gating for an Ultra-Low-Power Intelligent Device


Abstract: "This paper presents a novel spiking neural network (SNN) classifier architecture for enabling always-on artificial intelligent (AI) functions, such as keyword spotting (KWS) and visual wake-up, in ultra-low-power internet-of-things (IoT) devices. Such always-on hardware tends to dominate the power efficiency of an IoT device and therefore it is paramount to minimize its power diss... » read more

Identification of two-dimensional layered dielectrics from first principles


Abstract "To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittiv... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors


Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

An Event-Driven and Fully Synthesizable Architecture for Spiking Neural Networks


Abstract:  "The development of brain-inspired neuromorphic computing architectures as a paradigm for Artificial Intelligence (AI) at the edge is a candidate solution that can meet strict energy and cost reduction constraints in the Internet of Things (IoT) application areas. Toward this goal, we present μBrain: the first digital yet fully event-driven without clock architecture, with co-lo... » read more

NeuroSim Simulator for Compute-in-Memory Hardware Accelerator: Validation and Benchmark


Abstract:   "Compute-in-memory (CIM) is an attractive solution to process the extensive workloads of multiply-and-accumulate (MAC) operations in deep neural network (DNN) hardware accelerators. A simulator with options of various mainstream and emerging memory technologies, architectures, and networks can be a great convenience for fast early-stage design space exploration of CIM hardw... » read more

Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices


Abstract:  "Recent advances in deep learning have been driven by ever-increasing model sizes, with networks growing to millions or even billions of parameters. Such enormous models call for fast and energy-efficient hardware accelerators. We study the potential of Analog AI accelerators based on Non-Volatile Memory, in particular Phase Change Memory (PCM), for software-equivalent accurate i... » read more

Benchmarking Highly Parallel Hardware for Spiking Neural Networks in Robotics


Abstract: "Animal brains still outperform even the most performant machines with significantly lower speed. Nonetheless, impressive progress has been made in robotics in the areas of vision, motion- and path planning in the last decades. Brain-inspired Spiking Neural Networks (SNN) and the parallel hardware necessary to exploit their full potential have promising features for robotic applica... » read more

Motional narrowing, ballistic transport, and trapping of room-temperature exciton polaritons in an atomically-thin semiconductor


Abstract "Monolayer transition metal dichalcogenide crystals (TMDCs) hold great promise for semiconductor optoelectronics because their bound electron-hole pairs (excitons) are stable at room temperature and interact strongly with light. When TMDCs are embedded in an optical microcavity, excitons can hybridise with cavity photons to form exciton polaritons, which inherit useful properties from... » read more

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers


Abstract "Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit stron... » read more

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