Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT)


Abstract: "This paper proposes an ultra-scaled memory device, called `Dynamic Flash Memory (DFM)'. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F2 cell can be achieved. Similar to DRAM [1], refresh is needed, but high speed block refresh can improve the duty ratio. Analogous to Flash [2], three fundamental operations of “0” Erase, “1” Program, and Read are nee... » read more

Convolutional Compaction-Based MRAM Fault Diagnosis


Abstract: "Spin-transfer torque magnetoresistive random-access memories (STT-MRAMs) are gradually superseding conventional SRAMs as last-level cache in System-on-Chip designs. Their manufacturing process includes trimming a reference resistance in STT-MRAM modules to reliably determine the logic values of 0 and 1 during read operations. Typically, an on-chip trimming routine consists of mult... » read more

MBIST-supported Trim Adjustment to Compensate Thermal Behavior of MRAM


Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the most promising candidates to replace conventional embedded memory such as Static RAM and Dynamic RAM. However, due to the small on/off ratio of MRAM cells, process variations may reduce the operating margin of a chip. Reference trimming was suggested as one of the ways to reduce variation impact to the chi... » read more

Intermittent Undefined State Fault in RRAMs


Abstract: " Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes the RRAM device to intermittently c... » read more

40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors


Abstract: "This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator (FD-SOI) complementary metal-oxide–semiconductor (CMOS) process with eight metal layers back-end-of-line (BEOL) option. VCOs architecture is based on an LC-tank with p-type metal-oxide�... » read more

Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs


  Abstract "Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometr... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics


Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

Variational Quantum Algorithms (VQA)


  Abstract "Applications such as simulating large quantum systems or solving large-scale linear algebra problems are immensely challenging for classical computers due their extremely high computational cost. Quantum computers promise to unlock these applications, although fault-tolerant quantum computers will likely not be available for several years. Currently available quantum device... » read more

Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE


T. Fukushima, "Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE," 2021 Symposium on VLSI Circuits, 2021, pp. 1-2, doi: 10.23919/VLSICircuits52068.2021.9492335. Abstract: "More recently, "chiplets" are expected for further scaling the performance of LSI systems. However, system integration with the chiplets is not a new methodology. The basic concept dates back well over ... » read more

Plasma processing for advanced microelectronics beyond CMOS


N. Marchack, L. Buzi, D. B. Farmer, H. Miyazoe, J. M. Papalia, H. Yan, G. Totir, and S. U. Engelmann , "Plasma processing for advanced microelectronics beyond CMOS", Journal of Applied Physics 130, 080901 (2021) https://doi.org/10.1063/5.0053666 ABSTRACT "The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process en... » read more

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