Exploiting Domain Wall Conduction in Nitride Ferroelectrics As A New Type of Memristive FeRAM (Kiel Univ., Fraunhofer, NaMLab, TU Dresden)


A new technical paper titled "Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing" was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT), NaMLab, and TU Dresden. Abstract "The emerging nitride ferroelectrics, such as Al1-xScxN promise to significantly advance our current information technology. In particular, two-terminal mem... » read more

Scalable AI/ML Method For Improved MTJ Performance (UT Austin, TSMC, TDK Headway)


A new technical paper titled "LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions" was published by researchers at University of Texas at Austin, TSMC, and TDK Headway Technologies Inc. Abstract "Magnetic tunnel junctions (MTJs) using magnesium oxide (MgO) tunnel barriers face challenges... » read more

Reliability Extension Architecture For Cost-Effective HBM (RPI, ScaleFlux, IBM TJ Watson)


A new technical paper titled "Making Strong Error-Correcting Codes Work Effectively for HBM in AI Inference" was published by researchers at Rensselaer Polytechnic Institute, ScaleFlux and IBM T.J. Watson Research Center. Abstract "LLM inference is increasingly memory bound, and HBM cost per GB dominates system cost. Current HBM stacks include short on-die ECC that tightens binning, raise... » read more

Two-Stage Hardware Fuzzer (TU Darmstadt)


A new technical paper titled "GoldenFuzz: Generative Golden Reference Hardware Fuzzing" was published by researchers at TU Darmstadt. Abstract "Modern hardware systems, driven by demands for high performance and application-specific functionality, have grown increasingly complex, introducing large surfaces for bugs and security-critical vulnerabilities. Fuzzing has emerged as a scalable sol... » read more

MoS2 Memristors With Fast Switching Speed and Low Power Consumption (AMO, RWTH Aachen et al.)


A new technical paper titled "Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications" was published by researchers at AMO GmbH, RWTH Aachen, Forschungszentrum Jülich, Peter Grünberg Institute, Eindhoven University of Technology et al. Abstract "Memristors based on 2D materials have garnered signifi... » read more

The Impact Of DRAM Writes On DDR5-Based Systems (Georgia Tech)


A new technical paper titled "BARD: Reducing Write Latency of DDR5 Memory by Exploiting Bank-Parallelism" was published by Georgia Tech. Abstract "This paper studies the impact of DRAM writes on DDR5-based system. To efficiently perform DRAM writes, modern systems buffer write requests and try to complete multiple write operations whenever the DRAM mode is switched from read to write. Whe... » read more

AFM-Based Protocol for Characterizing the Incipient Stages of Plasticity on Hybrid Bonding-Ready Copper Pads (NIST, Intel, Colorado School of Mines)


A new technical paper titled "Probing the Nanoscale Onset of Plasticity in Electroplated Copper for Hybrid Bonding Structures via Multimodal Atomic Force Microscopy" was published by researchers at the National Institute of Standards and Technology, Intel, and Colorado School of Mines. Excerpt  "The slowdown of Moore’s law has elicited a paradigm shift whereby shrinking of in-plane dim... » read more

Nano Gap MEMS Switches for Power Gating in Low Power Systems (KAIST, Chonnam National Univ.)


A new technical paper titled "Ultra-Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications" was published by researchers at KAIST and Chonnam National University. Abstract "The growing demand for artificial intelligence and high-performance computing accelerates concerns over leakage power in highly integrated semiconductor systems. Power gating can reduce th... » read more

Economic And Scalable Algorithm-Driven On-Chip Integration Approach (USC)


A new technical paper titled "Algorithm-Driven On-Chip Integration for High Density and Low Cost" was published by researchers at University of Southern California. Abstract "Growing interest in semiconductor workforce development has generated demand for platforms capable of supporting large numbers of independent hardware designs for research and training without imposing high per-proje... » read more

Potential Of SnO2-x FETs for Radiation-Tolerant Electronics (KNU et al.)


A new technical paper titled "Effects of Proton Radiation on Tin Oxide: Implications for Space Electronics" was published by researchers at Kyungpook National University and Korea Atomic Energy Research Institute. Abstract "This study examines the effects of 5 MeV proton irradiation, applied at fluences of 1 × 1011, 1 × 1012, 1 × 1013, and 1 × 1014 cm−2, on 20 nm thick SnO2-x th... » read more

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