Free-Space Gated Transistor In Wide Bandgap And Ultra Wide Bandgap Semiconductors (KAUST Et Al.)


A new technical paper titled "Lateral Semiconductor–Free-Space Gate Transistors" was published by researchers at KAUST and the Indian Institute of Technology. Abstract "We introduce a novel lateral transistor architecture, the semiconductor−free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor−free-space gate configuration with su... » read more

Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Are You Paying Proper Attention To Your ESD Design Windows?


Electrostatic discharge (ESD) issues in integrated circuit (IC) chip designs have become more critical at advanced semiconductor process nodes, due to shrinking transistor dimensions and oxide layer thickness [1]. There are many ESD design rules and flows that designers check for common ESD issues, such as topological checks for the existence of ESD protection devices, current density (CD) chec... » read more