Research Bits: Mar. 3


Computational electron microscopy Researchers from Cornell University, TSMC, and ASM used electron ptychography for atomic-scale defect inspection of transistors. The computational imaging method uses an extremely precise electron microscope pixel array detector (EMPAD) to collect detailed scattering patterns of electrons after they pass through transistors and compare how the patterns chan... » read more

Research Bits: Oct. 7


Doping oxide insulator improves SiGe conductivity Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor. Called modulation acceptor doping (MAD), the technique ena... » read more

Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more

Review of Automatic EM Image Algorithms for Semiconductor Defect Inspection (KU Leuven, Imec)


A new technical paper titled "Electron Microscopy-based Automatic Defect Inspection for Semiconductor Manufacturing: A Systematic Review" was published by researchers at KU Leuven and imec. Abstract: "In this review, automatic defect inspection algorithms that analyze Electron Microscope (EM) images of Semiconductor Manufacturing (SM) products are identified, categorized, and discussed. Thi... » read more