Doping oxide insulator improves SiGe conductivity
Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor.
Called modulation acceptor doping (MAD), the technique ena...
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