tag: finFETs

Calibre xACT Parasitic Extraction Supports Signal Integrity At Advanced Nodes
By Mentor, a Siemens Business - 21 Apr, 2016 - Comments: 0

At advanced nodes, signal integrity analysis requires precise characterization, which in turn requires an accurate extracted netlist. Models that handle new impacts on parasitic extraction at advanced nodes, including multi-patterning, finFETs, and resistance and capacitance effects, must be used. Learn how the Calibre xACT extraction tool supports these advanced foundry device models and leadi... » read more

Have Margins Outlived Their Usefulness?
By Aveek Sarkar - 20 Apr, 2016 - Comments: 0

To automate the process of solving complex design problems, the traditional approach has been to partition them into smaller, manageable tasks. For each task, we have built the best possible solution which we continuously refine over time. Additionally, we have managed the interdependencies between tasks by defining boundaries or margins; these often have been best- and worst-case values used t... » read more

Rightsizing Challenges Grow
By Ed Sperling - 20 Apr, 2016 - Comments: 0

Rightsizing chip architectures is getting much more complicated. There are more options to choose from, more potential bottlenecks, and many more choices about what process to use at what process node and for which markets and price points. Rightsizing is a way of targeting chips to specific application needs, supplying sufficient performance while minimizing power and cost. It has been a to... » read more

Analyzing The Integrity Of Power
By Ann Mutschler - 14 Apr, 2016 - Comments: 0

Power analysis is shifting much earlier in the chip design process, with power emerging as the top design constraint at advanced process nodes. As engineering teams pack more functionality and content into bigger and more complex chips, they are having to deal with more complex interactions that affect everything from power to its impact on signal integrity and long-term reliability. That, i... » read more

Foundation IP For 7nm FinFETs: Design And Implementation
By Synopsys - 13 Apr, 2016 - Comments: 0

Learn about the challenges of IP design and implementation for 7nm FinFETs. Along with the performance and area benefits that the node brings, designers must understand the significant technical challenges stemming from increasing variability associated with tighter pitches and more complex lithography steps. Design for variability and reliability considerations will require comprehensive model... » read more

Pain Points At 7nm
By Ed Sperling - 24 Mar, 2016 - Comments: 3

Early work has begun on 7nm. Process technology has progressed to the point where IP and tools are being qualified. There is still a long way to go. But as companies begin engaging with foundries on this process node—[getentity id="22586" comment="TSMC"] is talking publicly about it, but [getentity id="22846" e_name="Intel"], [getentity id="22819" comment="GlobalFoundries"] and [getentity ... » read more

Timing Is Everything
By Ed Sperling - 17 Mar, 2016 - Comments: 0

It's easy to look back on companies or products that missed the market because they were too early. Remember the Eo? The brick-like personal digital assistant that AT&T introduced in 1993 had an antenna that hinted at 4G connectivity. Unfortunately, there was no 4G available at the time, so it was just an extra wire. (Check out the video of the tablet version here.) The EO 440 Personal... » read more

Reducing Post-Placement Leakage With Stress-Enhanced Fill Cells
By Valeriy Sukharev - 17 Mar, 2016 - Comments: 0

By Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan and Henrik Hovsepyan As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) power is used while the chip is performing various functions, while static (leakage) power is consumed by leakage current (Figure... » read more

New Memory Approaches And Issues
By Ed Sperling - 14 Mar, 2016 - Comments: 1

New memory types and approaches are being developed and tested as DRAM and Moore's Law both run out of steam, adding greatly to the confusion of what comes next and how that will affect chip designs. What fits where in the memory hierarchy is becoming less clear as the semiconductor industry grapples with these changes. New architectures, such as [getkc id="202" kc_name="fan-outs"] and [getk... » read more

7nm Lithography Choices
By Mark LaPedus - 07 Mar, 2016 - Comments: 2

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm. Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies ... » read more

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