A new technical paper, "Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors," was published by researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology.
Abstract
"Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect tra...
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