Front-end patterning and epitaxy approach on Si photonics 220nm SOI substrates


A new technical paper titled "Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator" was published by researchers at Cardiff University and University of Southampton. Abstract "Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by di... » read more