3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other.
A major challenge in producing multilayered 3D NAND devices is tier bending and tier collapse. These undesirable conditions can be caused by a combination of factors.
Using the virtual Design of Experiment (DOE) capabilities in SEMulator...
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