Why 3D NAND Layers Bend (And How To Prevent It)


3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D NAND devices is tier bending and tier collapse. These undesirable conditions can be caused by a combination of factors. Using the virtual Design of Experiment (DOE) capabilities in SEMulator... » read more