ST-Ericsson 28nm FD-SOI/ARM Chip Hits 2.8GHz at CES


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, fo... » read more

Changes Ahead


Semiconductor Manufacturing & Design talks with GlobalFoundries EVP Mike Noonen about future challenges in IC manufacturing, the future of stacked die and ecosystem challenges ahead. [youtube vid=Wdp9JYvBeSk] » read more

Winners And Losers


By Joanne Itow Semiconductor revenues will log in a relatively lackluster growth for 2012, only 3% more than 2011. That is below the 4.8% CAGR (compound annual growth rate) over the past five years and well below the 8.4% CAGR over the past 10 years. On the other hand, semiconductor units continue to show healthy growth, driving up wafer demand. Units will grow slightly faster compared to the ... » read more

CMP, ST et al offer 28nm FD-SOI for prototyping, research


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ What would a port to 28nm FD-SOI do for your design?  A recent announcement by CMP, STMicroelectronics and Soitec invites you to find out.  Specifically, ST’s CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process – which uses innovative silicon substrates from Soitec and incorporates robust, compact model... » read more

The GaN Plan


By Ann Steffora Mutschler Given the need to control power in high-end market segments such as servers, notebooks, mobile handsets and wired communications equipment, the market for gallium nitride (GaN)-based chips is poised for explosive growth. Case in point: Server farms are using more and more electricity, and the cost of that power is getting to be a significant fraction of the operati... » read more

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