Mask Economics Shape High-NA EUV Adoption


Key Takeaways: Mask costs are not stopping leading-edge scaling, but they increasingly influence design, node, and process choices. High-NA EUV will tighten requirements for CD, EPE, local CDU, mask 3D modeling, stitching, and materials. Reduced depth of focus in High-NA EUV will drive new resist, etch, film, and absorber approaches. Experts at the table:Semiconductor Engine... » read more

Curvilinear Masks Push The Limits Of Inspection And Metrology


Key Takeaways: Curvilinear masks require native data flows across design, mask data prep, writing, inspection, and metrology. Inspection is shifting from finding all defects to identifying which mask variations actually print on wafer. High-NA EUV will intensify inspection challenges, particularly for small printable defects and actinic contrast limits. Experts at the table... » read more