tag: NAND

Many Paths To Hafnium Oxide
By Katherine Derbyshire - 31 Mar, 2016 - Comments: 0

Equipment and materials suppliers often talk about the fragmentation of integrated circuit processing. While the number of manufacturers has gone down, the diversity of the underlying semiconductor market has increased. Low-power processors for mobile devices, non-volatile memory for solid state disks, and dedicated graphics processors all have different requirements from the traditional ind... » read more

3D NAND Flash Processing
By Coventor - 16 Mar, 2016 - Comments: 0

Coventor’s powerful SEMulator3D semiconductor process modeling platform offers a wide range of technology development capabilities for the development of cutting edge 3D NAND Flash Technology. 3D NAND promises high memory cell density with reduced data corruption, but also brings processing challenges. The structural complexity and inherent 3D nature of devices using 3D NAND require a predict... » read more

7nm Lithography Choices
By Mark LaPedus - 07 Mar, 2016 - Comments: 2

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm. Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies ... » read more

Memory Lane: Far From A Leisurely Stroll
By Joanne Itow - 18 Feb, 2016 - Comments: 0

The only semiconductor market segment that has not been taken over by the foundries and still remains dominated by IDMs is the memory sector. The memory market is the last bastion for true IDM manufacturers, who must be savvy in the changing trends in end market applications, advanced technology development, and must still determine how much and when to invest in additional capacity. With on... » read more

Inside The MRAM
By Mark LaPedus - 17 Sep, 2015 - Comments: 0

Today, the industry is shipping various next-generation nonvolatile memory types, such as 3D NAND, MRAM and ReRAM. In fact, MRAM has been shipping for some time. To get a handle on MRAM, Semiconductor Engineering sat down to discuss the technology with Phillip LoPresti, president and chief executive of Everspin, a supplier of MRAMs. What follows are excerpts of that conversation. SE: Where ... » read more

ALD Market Heats Up
By Mark LaPedus - 17 Sep, 2015 - Comments: 1

Amid the shift to 3D NAND, finFETs and other device architectures, the atomic layer deposition (ALD) market is heating up on several fronts. Applied Materials, for example, recently moved to shakeup the landscape by rolling out a new, high-throughput ALD tool. Generally, [getkc id="250" kc_name="ALD"] is a process that deposits materials layer-by-layer at the atomic level, enabling thin and ... » read more

Memory Hierarchy Shakeup
By Mark LaPedus - 16 Sep, 2015 - Comments: 0

It’s no secret that today’s memory chips and storage devices are struggling to keep up with the growing demands in data processing. To solve the problem, chipmakers have been working on several next-generation memory types. But most technologies have been delayed or fallen short of their promises. But after numerous delays, a new wave of next-generation, nonvolatile memories are finally ... » read more

Which Memory Type Should You Use?
By Loren Shalinsky - 10 Sep, 2015 - Comments: 1

I continue to get besieged by statements in which memory “latency” and “bandwidth” get misused. As I mentioned in my last blog, latency is defined as how long the CPU needs to wait before the first data is available, while bandwidth is how fast additional data can be “streamed” after the first data point has arrived. Bandwidth becomes a bigger factor in performance when data is stor... » read more

The Memory And Storage Hierarchy
By Loren Shalinsky - 13 Aug, 2015 - Comments: 0

The memory and storage hierarchy is a useful way of thinking about computer systems, and the dizzying array of memory options available to the system designer. Many different parameters characterize the memory solution. Among them are latency (how long the CPU needs to wait before the first data is available) and bandwidth (how fast additional data can be “streamed” after the first data poi... » read more

It’s a Materials World, With Positive Forecast
By SEMI - 23 Jul, 2015 - Comments: 0

By Michael Fury What’s the latest in materials forecasts for ALD/CVD precursors, CMP consumables, electronic gases, silicon wafers and sputtering targets? Techcet gives us an update. Metal Gate and Electrode Precursors to Double in Five Years Use of front-end Ta and W metal gate and Hf gate dielectric precursors will grow over 2.5x by 2020, according to a new report from Techcet, “20... » read more

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