Scaling of 2D Semiconductor Nanoribbons for High Performance Transistors (Purdue, NUS et al.)


A new technical paper titled "Scaling of Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics" was published by researchers at Purdue University, National University of Singapore, Nexstrom Pte. Ltd and Dankook University. Abstract "Monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs), with their atomically thin bodies, are promising candida... » read more

Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)


A new technical paper titled "Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides" was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. Abstract "Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional se... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)


A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more