A new technical paper titled “Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides” was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory.
Abstract
“Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both n– and p-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths down to 25 nm and lengths down to 50 nm. ‘Anchored’ contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edge degradation. The devices reach on-state currents up to 560, 420, and 130 µA µm-1 at 1 V drain-to-source voltage for n-type MoS2, WS2, and p-type WSe2, respectively, integrated with thin high-κ dielectrics. These results surpass prior reports for single-gated nanoribbons, the WS2 by over 100 times, even in normally-off (enhancement-mode) transistors. Taken together, these findings suggest that topdown patterned 2DS nanoribbons are promising building blocks for future nanosheet transistors.”
Find the technical paper here. September 2025.
Peña, Tara, Anton EO Persson, Andrey Krayev, Áshildur Friðriksdóttir, Kathryn Neilson, Zhepeng Zhang, Anh Tuan Hoang et al. “Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides.” arXiv preprint arXiv:2509.09964 (2025).
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